Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films

被引：57

作者：

Altendorf, Simone G. ^{[1
,2
]}

Jeong, Jaewoo ^{[1
]}

Passarello, Donata ^{[1
,3
,4
]}

Aetukuri, Nagaphani B. ^{[1
]}

Samant, Mahesh G. ^{[1
]}

Parkin, Stuart S. P. ^{[1
,2
]}

机构：

[1] IBM Almaden Res Ctr, San Jose, CA 95120 USA

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] Johannes Gutenberg Univ Mainz, Grad Sch Excellence Mat Sci Mainz, Staudingerweg 9, D-55128 Mainz, Germany

[4] Univ Kaiserslautern, Fachbereich Phys, Erwin Schrodinger Str 56, D-67663 Kaiserslautern, Germany

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 26期

关键词：

SUPERCONDUCTING PHASE; THIN-FILMS; WO3; INSULATOR; SURFACE; PHOTOEMISSION; SPECTROSCOPY; OXYGEN; SUPPRESSION; TRANSITION;

D O I：

10.1002/adma.201505631

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.

引用

页码：5284 / +

页数：10

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