Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

被引：3

作者：

Sumita, K. ^{[1
]}

Toprasertpong, K. ^{[1
]}

Takenaka, M. ^{[1
]}

Takagi, S. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 10期

关键词：

SEMICONDUCTOR; SURFACE; GAP; INTEGRATION; MOBILITY; IMPACT; STATES;

D O I：

10.1063/5.0057182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface trap density (D-it) inside the conduction band of (111)-oriented InAs-on-insulator (InAs-OI) n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) was experimentally evaluated by developing a method through a combination of a Hall measurement and quasi-static split C-V (Hall-QSCV). The surface potential and D-it of the InAs-OI nMOSFET were self-consistently calculated by numerically solving the Schrodinger-Poisson equation. The energy distributions of D-it were found to be almost independent of the ultra-thin-body channel thickness and the quantization energy, indicating the validity of the proposed Hall-QSCV evaluation. The energy position of the D-it minimum is in good agreement with the theoretically predicted position of the charge neutrality level, which locates deeply inside the conduction band of InAs. The experimental maximum surface electron density N-smax at the InAs MOS interface, limited by Fermi level pinning, is 1.2 x 10(13) cm(-2), which is 2-3 times higher than N-smax at the In0.53Ga0.47As MOS interfaces, owing to the lower D-it inside the InAs conduction band.

引用

页数：5