Stress-enhanced dislocation density reduction in multicrystalline silicon

被引：11

作者：

Bertoni, M. I. ^{[1
]}

Powell, D. M. ^{[1
]}

Vogl, M. L. ^{[1
]}

Castellanos, S. ^{[1
]}

Fecych, A. ^{[1
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 01期

关键词：

dislocations; stress; dislocation density; 3-point bending; annealing; high temperature; Si; DEFORMATION; MOTION;

D O I：

10.1002/pssr.201004344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stress is generally perceived to be detrimental for multicrystalline silicon (me-Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in me-Si. At high temperatures, close to the melting point (>0.8T(m)), we observe that the application of stress as well as the relief of residual stress, can modify the density of preexisting dislocations in as-grown me-Si under certain conditions, leading to a net local reduction of dislocation density. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：28 / 30

页数：3

共 20 条

[1]

ALEXANDER H, 1981, CRYST RES TECHNOL, V16, P231

[2]

[Anonymous], P 3 WORLD C PHOT EN

[3]

Bertoni Mariana, 2010, Diffusion and Defect Data Part B (Solid State Phenomena), V156-8, P11, DOI 10.4028/www.scientific.net/SSP.156-158.11

[4] Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor [J].