The evolution of microstructure and surface bonding in SiO2 aerogel film after plasma treatment using O2, N2, and H2 gases

被引：15

作者：

Kim, JJ ^{[1
]}

Park, HH ^{[1
]}

Hyun, SH ^{[1
]}

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seodaemoon Ku, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2001年 / 384卷 / 02期

关键词：

IMD; SiO2; aerogel film; plasma treatment; VUV;

D O I：

10.1016/S0040-6090(00)01827-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigated the effects of various gases (O-2, N-2, and H-2) plasma treatment on SiO2 aerogel films in order to strengthen the film and improve the surface chemical bonding nature of the film. The plasma treatments could reduce the density of silanol (Si-OH) and ethoxy (Si-OR) groups. The physical, chemical, and electrical properties of SiO2 aerogel film through curing with various plasma gases were evaluated. The modification of SiO2 aerogel film by plasma gas treatment was related to the physical impingement effect of ions, chemical reaction, and irradiated vacuum UV. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：236 / 242

页数：7

共 19 条

[1] DIAGNOSTIC ON N-2 PLASMA WITH AN ENERGY-RESOLVED QUADRUPOLE MASS-SPECTROMETER AT THE POWERED ELECTRODE IN A REACTIVE ION ETCHING SYSTEM - ION ENERGY-DISTRIBUTION OF N-2(+) AND N+ [J].

BECKER, F ;

RANGELOW, IW ;

MASSELI, K ;

KASSING, R .

SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :485-490

[2] Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher [J].

Cismaru, C ;

Shohet, JL .

APPLIED PHYSICS LETTERS, 1999, 74 (18) :2599-2601

[3] GLOW-DISCHARGE TECHNIQUES FOR CONDITIONING HIGH-VACUUM SYSTEMS [J].

DYLLA, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1276-1287

[4]

Fazlin F, 1996, SOLID STATE TECHNOL, V39, P117

[5] Electronic properties of MOS capacitor exposed to Inductively coupled hydrogen plasma [J].

Ikeda, A ;

Sadou, T ;

Nagashima, H ;

Kouno, K ;

Yoshikawa, N ;

Tshukamoto, K ;

Kuroki, Y .

THIN SOLID FILMS, 1999, 345 (01) :172-177

[6] SiO2 aerogel film as a novel intermetal dielectric [J].

Jo, MH ;

Park, HH ;

Kim, DJ ;

Hyun, SH ;

Choi, SY ;

Paik, JT .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :1299-1304

[7] Evaluation of SiO2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric [J].

Jo, MH ;

Hong, JK ;

Park, HH ;

Kim, JJ ;

Hyun, SH .

MICROELECTRONIC ENGINEERING, 1997, 33 (1-4) :343-348

[8] Effect of O2 plasma treatment on the properties of SiO2 aerogel film [J].

Kim, HR ;

Park, HH ;

Hyun, SH ;

Yeom, GY .

THIN SOLID FILMS, 1998, 332 (1-2) :444-448

[9] The effect of Ar+ ion bombardment on SiO2 aerogel film [J].

Kim, HR ;

Park, HH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :6955-6958

[10] Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment [J].

Liu, PT ;

Chang, TC ;

Mor, YS ;

Sze, SM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A) :3482-3486

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