Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN

被引：34

作者：

You, Shi ^{[1
]}

Detchprohm, Theeradetch ^{[1
]}

Zhu, Mingwei ^{[1
]}

Hou, Wenting ^{[1
]}

Preble, Edward A. ^{[2
]}

Hanser, Drew ^{[2
]}

Paskova, Tanya ^{[2
]}

Wetzel, Christian ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Smart Lighting Engn Res Ctr, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

基金：

美国国家科学基金会;

关键词：

GAN QUANTUM-WELLS; OPTICAL-PROPERTIES; SEMIPOLAR;

D O I：

10.1143/APEX.3.102103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Linearly polarized light emission is analyzed in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photoluminescence, m-plane GaInN/GaN structures reach a polarization ratio from 0.70 at 460nm to 0.89 at 515nm peak wavelength. For a-plane structures, the polarization ratio is 0.53 at 400nm and 0.60 at 480-510 nm. In electroluminescence the polarization ratio is 0.77 at 505nm in 350 x 350 mu m(2) m-plane devices at 20 mA. Such a device should allow 44% power saving compared with nonpolarized c-plane LEDs combined with a polarizing filter, as commonly used in LED-backlit liquid crystal displays. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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