A compact plasmonic MOS-based 2x2 electro-optic switch

被引：56

作者：

Ye, Chenran ^{[1
]}

Liu, Ke ^{[1
,2
]}

Soref, Richard A. ^{[3
]}

Sorger, Volker J. ^{[1
]}

机构：

[1] George Washington Univ, Dept Elect & Comp Engn, 801 22nd St NW, Washington, DC 20052 USA

[2] Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

[3] Univ Massachusetts, Coll Sci & Engn, Boston, MA 02125 USA

来源：

NANOPHOTONICS | 2015年 / 4卷 / 03期

关键词：

Optical switching device; Plasmonics; Electro-optic switch; Photonic integrated circuits; Silicon Photonics; DIRECTIONAL COUPLER; WAVE-GUIDE; ULTRACOMPACT;

D O I：

10.1515/nanoph-2015-0010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

引用

页码：261 / 268

页数：8

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