Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

被引：47
|
作者：
Huang, C. T. [1 ]
Hsin, C. L. [1 ]
Huang, K. W. [1 ]
Lee, C. Y. [1 ]
Yeh, P. H. [1 ]
Chen, U. S. [1 ]
Chen, L. J. [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期
关键词：
D O I：
10.1063/1.2777181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3 center dot 6H(2)O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 mu m, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5x10(-2) Omega cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Er-doped polycrystalline silicon for light emission at λ=1.54 µm
    Thomas D. Chen
    Anuradha M. Agarwal
    Annalena Thilderkvist
    Jurgen Michel
    Lionel C. Kimerling
    Journal of Electronic Materials, 2000, 29 : 973 - 978
  • [2] Er-doped polycrystalline silicon for light emission at ℷ=1.54 μm
    Chen, TD
    Agarwal, AM
    Thilderkvist, A
    Michel, C
    Kimerling, LC
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (07) : 973 - 978
  • [3] Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm
    Ramirez, J. M.
    Cueff, S.
    Berencen, Y.
    Labbe, C.
    Garrido, B.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
  • [4] Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μ m
    20143718145888
    Ramírez, J.M. (jmramirez@el.ub.edu), 1600, American Institute of Physics Inc. (116):
  • [5] 1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides
    Jang, Y.R.
    Yoo, K.H.
    Ahn, J.S.
    Kim, C.
    Park, S.M.
    Journal of Applied Physics, 2009, 106 (06):
  • [6] 1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides
    Jang, Y. R.
    Yoo, K. H.
    Ahn, J. S.
    Kim, C.
    Park, S. M.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [7] Photoluminescence at 1.54 μm of Er-doped hydrogenated amorphous silicon
    Bresler, M
    Gusev, O
    Kuznetsov, A
    Kudoyarova, V
    Terukov, E
    Yassievich, I
    Fuhs, W
    Ulber, I
    Weiser, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 394 - 398
  • [8] Aligned Er-Doped ZnO Nanorod Arrays with Enhanced 1.54 μm Infrared Emission
    Yang, W. C.
    Wang, C. W.
    Wang, J. C.
    Chang, Y. C.
    Hsu, H. C.
    Nee, Tzer-En
    Chen, L. J.
    He, J. H.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (07) : 3363 - 3368
  • [9] Current injection 1.54 μm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells
    Al Tahtamouni, T. M.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    OPTICAL MATERIALS EXPRESS, 2016, 6 (11): : 3476 - 3481
  • [10] Silicon-based light-emitting devices:: Properties and applications of crystalline, amorphous and Er-doped nanoclusters
    Iacona, Fabio
    Irrera, Alessia
    Franzo, Giorgia
    Pacifici, Domenico
    Crupi, Isodiana
    Miritello, Maria
    Presti, Calogero D.
    Priolo, Francesco
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) : 1596 - 1606
12345