Ab initio potential energy surface for HeF2 in its ground electronic state

被引:4
作者
Lourderaj, U [1 ]
Sathyamurthy, N [1 ]
机构
[1] Indian Inst Technol, Dept Chem, Kanpur 208016, Uttar Pradesh, India
关键词
He-F-2; potential energy surface; coupled-cluster; configuration interaction;
D O I
10.1016/j.chemphys.2004.05.031
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The ground state potential energy surface for He-F-2 has been generated using the coupled-cluster singles and doubles excitation approach with perturbative treatment of triple excitations [CCSD(T)] and multi-reference configuration interaction (MRCI) methodologies, with augmented correlation consistent quadruple zeta basis set and diffused functions. Both the CCSD(T) and MRCI surfaces are compared and the results analyzed. The CCSD(T) surface exhibits van der Waals minima at different distances for different orientations of He approaching F-2 and is adequate to describe accurately only in the region around the equilibrium bond distance of F-2. The MRCI surface, on the other hand, yields reliable results for a wider range of F-F bond distances leading to the correct asymptote. Davidson correction to the MRCI surface makes it purely repulsive over the regions investigated. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:277 / 284
页数:8
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