Electrical characteristics and hot carrier effects in quantum well solar cells

被引：2

作者：

Dac-Trung Nguyen ^{[1
,2
]}

Lombez, Laurent ^{[1
,2
]}

Gibelli, Francois ^{[2
]}

Paire, Myriam ^{[1
,2
]}

Boyer-Richard, Soline ^{[1
,3
]}

Durand, Olivier ^{[1
,3
]}

Guillemoles, Jean-Francois ^{[1
,2
]}

机构：

[1] Inst Photovolta Ile de France IPVF, F-92160 Antony, France

[2] UMR 7174 CNRS EDF Chimie ParisTech, IRDEP, F-78400 Chatou, France

[3] UMR 6082 CNRS INSA, FOTON OHM, F-35708 Rennes, France

来源：

PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI | 2017年 / 10099卷

关键词：

GAAS; ABSORPTION; INP; RELAXATION; GAP;

D O I：

10.1117/12.2251331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the opto-electrical characterization of quantum-well solar cells designed for generation of hot carriers. Short-circuit current is proportional to laser power in the entire range. Population density, temperature and quasi-Fermi level splitting of photo-generated confined carriers are investigated by fitting the full luminescence spectra using generalized Planck's law. The energy-dependent absorptivity is identified to obtain good fit accuracy and takes into account the absorption of excitons and free carriers in the quantum well. Furthermore, electrical injection and extraction across the barriers modify the temperature of the quantum well carrier population linearly, hinting at the role of barriers as semi-selective high-energy contact.

引用

页数：8

共 29 条

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