D-Band Heterodyne Integrated Imager in a 65-nm CMOS Technology

被引：14
|
作者：
Yoon, Daekeun [1 ]
Kim, Namhyung [1 ]
Song, Kiryong [1 ]
Kim, Jungsoo [1 ]
Oh, Seung Jae [2 ]
Rieh, Jae-Sung [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
[2] Yonsei Univ, Coll Med, YUMS KRIBB Med Convergence Res Inst, Seoul 120752, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
CMOS; CMOS integrated circuit; imaging; receivers; ARRAY;
D O I：
10.1109/LMWC.2015.2390496
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz(1/2) were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 x 800 mu m(2) including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.
引用
收藏
页码：196 / 198
页数：3
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