Submicron-scale diamond selective-area growth by hot-filament chemical vapor deposition

被引：3

作者：

Ohmagari, Shinya ^{[1
]}

Matsumoto, Takeshi ^{[1
]}

Umezawa, Hitoshi ^{[1
]}

Mokuno, Yoshiaki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

来源：

THIN SOLID FILMS | 2016年 / 615卷

关键词：

Diamond; Selective-growth; Boron; Hot-filament; CVD; Raman; FILMS;

D O I：

10.1016/j.tsf.2016.07.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective-area growth, which can be an alternative to ion implantation, is an important technology for processing diamond power devices. In conventional chemical vapor deposition (CVD), a portion of the metal mask (non-growing region) peels off and is unintentionally incorporated into the film; therefore, creating high-quality fine patterns is a great challenge. In this study, we developed a technique to fabricate fine structures on a submicron scale by employing hot-filament (HF) CVD. The mask pattern was kept intact during growth, and submicron-scale selective-area growth was realized. As a result, contamination-free metallic p(+) diamond films possessing a smooth surface morphology were successfully selectively grown. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：239 / 242

页数：4

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