Bandstructure Engineering with a 2-D Patterned Quantum Well Superlattice

被引：4
作者：
Verma, Varun Boehm [1 ]
Dias, Neville L. [1 ]
Reddy, Uttam [1 ]
Bassett, Kevin P. [1 ]
Li, Xiuling [1 ]
Coleman, James J. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 04期
基金：
美国国家科学基金会;
关键词：
Coupled quantum dots; quantum dot; quantum dot laser; quantum dot molecule; INDUCED MASS-TRANSPORT; DOT LASERS; SURFACE-ENERGY; DIODE-LASER; SEGREGATION; GAAS;
D O I：
10.1109/JQE.2010.2090134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.
引用
收藏
页码：417 / 423
页数：7
相关论文
共 23 条
  • [1] Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers
    Bhattacharyya, D
    Avrutin, EA
    Bryce, AC
    Marsh, JH
    Bimberg, D
    Heinrichsdorff, F
    Ustinov, VM
    Zaitsev, SV
    Ledentsov, NN
    Kop'ev, PS
    Alferov, ZI
    Onischenko, AI
    O'Reilly, EP
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 648 - 657
  • [2] Characterization of semiconductor laser gain media by the segmented contact method
    Blood, P
    Lewis, GM
    Smowton, PM
    Summers, H
    Thomson, J
    Lutti, J
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1275 - 1282
  • [3] A novel ordered nanopore array diode laser
    Elarde, V. C.
    Coleman, J. J.
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (1-4) : 240 - 242
  • [4] Nanoscale selective area epitaxy for optoelectronic devices
    Elarde, V. C.
    Coleman, J. J.
    [J]. PROGRESS IN QUANTUM ELECTRONICS, 2007, 31 (06) : 225 - 257
  • [5] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
    ESAKI, L
    TSU, R
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
  • [6] Grahn H.T., 1995, SEMICONDUCTOR SUPERL
  • [7] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
    HAKKI, BW
    PAOLI, TL
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
  • [8] Existence of a phonon bottleneck for excitons in quantum dots
    Heitz, R
    Born, H
    Guffarth, F
    Stier, O
    Schliwa, A
    Hoffmann, A
    Bimberg, D
    [J]. PHYSICAL REVIEW B, 2001, 64 (24)
  • [9] Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity
    Kitamura, T
    Ohtsubo, R
    Murayama, M
    Kuroda, T
    Yamaguchi, K
    Tackeuchi, A
    [J]. 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1165 - 1168
  • [10] SURFACE-ENERGY-INDUCED MASS-TRANSPORT PHENOMENON IN ANNEALING OF ETCHED COMPOUND SEMICONDUCTOR STRUCTURES - THEORETICAL MODELING AND EXPERIMENTAL CONFIRMATION
    LIAU, ZL
    ZEIGER, HJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2434 - 2440
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