Bandstructure Engineering with a 2-D Patterned Quantum Well Superlattice

被引：4

作者：

Verma, Varun Boehm ^{[1
]}

Dias, Neville L. ^{[1
]}

Reddy, Uttam ^{[1
]}

Bassett, Kevin P. ^{[1
]}

Li, Xiuling ^{[1
]}

Coleman, James J. ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 04期

基金：

美国国家科学基金会;

关键词：

Coupled quantum dots; quantum dot; quantum dot laser; quantum dot molecule; INDUCED MASS-TRANSPORT; DOT LASERS; SURFACE-ENERGY; DIODE-LASER; SEGREGATION; GAAS;

D O I：

10.1109/JQE.2010.2090134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.

引用

页码：417 / 423

页数：7

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