Stacked inductors and transformers in CMOS technology

被引：252

作者：

Zolfaghari, A ^{[1
]}

Chan, A ^{[1
]}

Razavi, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 04期

关键词：

inductors; oscillators; quality factor; RF circuits; self-resonance frequency; stacked spirals; transformers; tuned amplifiers;

D O I：

10.1109/4.913740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers.

引用

页码：620 / 628

页数：9

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