Temperature dependence of the diffusive conductivity of bilayer graphene

被引:22
作者
Adam, Shaffique [1 ]
Stiles, M. D. [1 ]
机构
[1] Natl Inst Stand & Technol, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 07期
关键词
TRANSPORT; SEMICONDUCTORS; PHASE;
D O I
10.1103/PhysRevB.82.075423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the temperature dependence of the conductivity depends strongly on the amount of disorder. In the regime relevant to most experiments, the conductivity is a function of T/T*, where T* is the characteristic temperature set by disorder. We demonstrate that experimental data taken from various groups collapse onto a theoretically predicted scaling function.
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页数:5
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