Hetero-epitaxial BiFeO3/SrTiO3 nanolaminates with higher piezoresponse performance over stoichiometric BiFeO3 films

被引：15

作者：

Lee, Geunhee ^{[1
]}

Fuentes-Fernandez, Erika M. A. ^{[1
]}

Lian, Guoda ^{[1
]}

Katiyar, Ram S. ^{[2
]}

Auciello, Orlando ^{[1
,3
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Puerto Rico, Inst Funct Nanomat, Rio Piedras, PR 00931 USA

[3] Univ Texas Dallas, Dept Bioengn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期

关键词：

THIN-FILMS;

D O I：

10.1063/1.4905871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this research, BiFeO3 (BFO) films are integrated into BFO/SrTiO3 (STO)/BFO nanolaminates (BSB-NLs) featuring nanometer-scale thickness of BFO and STO layers. By introducing the STO layer in between two BFO layers, the leakage current density is reduced by two orders of magnitude with respect to relatively high leakage currents of current single BFO layers, i.e., from 10(-5) A/cm(2) to 10(-7) A/cm(2). The BSB-NL also shows very high piezoelectric response, which is similar to 5 times higher than that of the pure BFO with the same thickness. The highly strained state of the BFO layers concurrently with the chemical/crystallographic state of the interfaces between the BFO and STO layers contribute to the very high values of piezoresponse and very low leakage current observed in the BSB-NLs. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 24 条

[1] Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films [J].

Auciello, O ;

Gruverman, A ;

Tokumoto, H ;

Prakash, SA ;

Aggarwal, S ;

Ramesh, R .

MRS BULLETIN, 1998, 23 (01) :33-42

[2]

Auciello O., 1991, Materials and Manufacturing Processes, V6, P33, DOI 10.1080/10426919108934734

[3]

Auciello O., 1995, HDB CRYSTAL GROWTH, V3, P365

[4] Improved ferroelectric and leakage properties in symmetric BiFeO3/SrTiO3 superlattice [J].

Bose, Somenath ;

Krupanidhi, S. B. .

APPLIED PHYSICS LETTERS, 2007, 90 (21)

[5] Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3 [J].

Catalan, G. ;

Bea, H. ;

Fusil, S. ;

Bibes, M. ;

Paruch, P. ;

Barthelemy, A. ;

Scott, J. F. .

PHYSICAL REVIEW LETTERS, 2008, 100 (02)

[6] Physics and Applications of Bismuth Ferrite [J].

Catalan, Gustau ;

Scott, James F. .

ADVANCED MATERIALS, 2009, 21 (24) :2463-2485

[7] Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary [J].

Du, XH ;

Zheng, JH ;

Belegundu, U ;

Uchino, K .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2421-2423

[8] Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite [J].

Fujino, S. ;

Murakami, M. ;

Anbusathaiah, V. ;

Lim, S. -H. ;

Nagarajan, V. ;

Fennie, C. J. ;

Wuttig, M. ;

Salamanca-Riba, L. ;

Takeuchi, I. .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[9] Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films [J].

Ji, Wei ;

Yao, Kui ;

Liang, Yung C. .

ADVANCED MATERIALS, 2010, 22 (15) :1763-+

[10] The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films [J].

Jiang, An Quan ;

Lee, Hyun Ju ;

Kim, Gun Hwan ;

Hwang, Cheol Seong .

ADVANCED MATERIALS, 2009, 21 (28) :2870-+

← 1 2 3 →