Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

被引：9

作者：

Saidi, F. ^{[1
]}

Bouzaiene, L. ^{[1
]}

Sfaxi, L. ^{[1
]}

Maaref, H. ^{[1
]}

机构：

[1] Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct, Monastir, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 02期

关键词：

InAs; GaAs (113); Quantum dot; MBE; Photoluminescence; PHOTOLUMINESCENCE; TEMPERATURE; ISLANDS;

D O I：

10.1016/j.jlumin.2011.08.013

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have investigated the optical properties of InAs/GaAs (1 1 3)A quantum dots grown by molecular beam epitaxy (MBE) with different growth rates by photoluminescence spectroscopy (PL) as a function of the excitation density and the sample temperature (10-300 K). Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A redshift of the InAs QDs PL band emission was observed when the growth rate was increased. This result was explained by the increase of the InAs quantum dot size with increasing growth rate. A significant redshift was observed when the arsenic flux was decreased. The evolution of the PL peak energy with increasing temperature has showed an S-shaped form due to the localization effects and is attributed to the efficient relaxation process of carriers in different InAs quantum dots and to the exciton transfer localized at the wetting layer. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：289 / 292

页数：4

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