This paper will present a complete manufacturing process for obtaining pyroelectric thin film sensors composed of a blend of PVDF and PMMA polymers. These sensors comprise a stack of metallic (Ti/Pt) electrodes around an active pyroelectric layer and are able to detect a temperature variation through the pyroelectric effect. Deposition is achieved with solution using a spin-coating and hot plate drying method. Addition of PMMA is a technique for promoting the crystallization of PVDF in the beta phase, with one of the PVDF polymer chain conformations producing a ferroelectric behaviour. Analysis of the role of the solvent evaporation rate has been carried out with FTIR and indicates that low temperature evaporation (below 70 A degrees C) leads to the presence of beta phase in the material. Polarization curve measurement also indicates the ferroelectric behaviour of deposited layers. Finally a thermal transient response indicates a pyroelectric coefficient of 20 mu C m(-2) K-1 which is close to the bulk material value (27 mu C m(-2) K-1).
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Yunseok
;
Kim, Wooyoung
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Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Wooyoung
;
Choi, Hyunwoo
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Choi, Hyunwoo
;
Hong, Seungbum
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Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USAKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Hong, Seungbum
;
Ko, Hyungsoo
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Ko, Hyungsoo
;
Lee, Heechul
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Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, Heechul
;
No, Kwangsoo
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Yunseok
;
Kim, Wooyoung
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h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Wooyoung
;
Choi, Hyunwoo
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h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Choi, Hyunwoo
;
Hong, Seungbum
论文数: 0引用数: 0
h-index: 0
机构:
Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USAKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Hong, Seungbum
;
Ko, Hyungsoo
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Ko, Hyungsoo
;
Lee, Heechul
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h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, Heechul
;
No, Kwangsoo
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h-index: 0
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea