Silicon Waveguides at the Mid-Infrared

被引:47
作者
Gamal, Rania [1 ,2 ]
Ismail, Yehea [1 ,2 ]
Swillam, Mohamed A. [3 ]
机构
[1] Zewail City Sci & Technol, Cairo 11461, Egypt
[2] Amer Univ Cairo, Dept Elect Engn, Cairo 11835, Egypt
[3] Amer Univ Cairo, Dept Phys, Cairo 11835, Egypt
关键词
Dispersion engineering; doped silicon; mid-infrared (MIR); optical sensors; plasmonics; silicon photonics; slot waveguide; QUANTUM EFFICIENCY; SLOW LIGHT; DETECTORS; PHOTONICS;
D O I
10.1109/JLT.2015.2410493
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose a detailed study of various novel waveguides made using doped silicon at the mid-infrared (MIR) range. These waveguides support a plasmonic-like mode with nanoscale confinement in the MIR. We also demonstrate a simple mechanism for tuning the plasma resonance through controlling the doping level of silicon. Moreover, the dispersion characteristics of the doped silicon devices are analyzed for different applications at the MIR region. We also investigated various phenomenon such as negative dispersion, which can be utilized for slow light and metamaterial applications, and epsilon-near-zero characteristics that can be used for extraordinary transmission. The MIR dispersion is studied thoroughly for the slot structure and the rectangular shell structure. The potential for biological and environmental sensing for the aforementioned structures is investigated as well. In addition, we demonstrated the use of the waveguide as a slow light medium; this was facilitated as the dispersion relations reached giant values in the order of 10(5) at the resonance.
引用
收藏
页码:3207 / 3214
页数:8
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