Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

被引:11
作者
Nardi, Federico [1 ,2 ]
Cagli, Carlo [1 ,2 ]
Spiga, Sabina [3 ]
Ielmini, Daniele [1 ,2 ]
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy
[3] IMM CNR, MDM, I-20864 Agrate Brianza, MB, Italy
关键词
Crossbar architecture; nonvolatile memory; resistive-switching random access memory (RRAM);
D O I
10.1109/LED.2011.2131631
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory devices. One of the main issues toward RRAM feasibility is the reduction of the reset current I(reset) necessary to restore the high-resistance state in the device. I(reset) can be reduced by controlling the size of the conductive filament responsible for the low-resistance state; however, available data only focus on direct-current reset analysis. This letter addresses I(reset) reduction under pulsed operation. Unstable reset behaviors, including set-reset and set instability, are shown to occur during relatively fast pulses and starting from set states with relatively large resistance values. These instability effects limit I(reset) reduction, posing a potential issue of minimum reset current achievable in RRAM devices.
引用
收藏
页码:719 / 721
页数:3
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