Effect of ionizing radiation in ultrasmall doses on dielectric properties of CdZnTe crystals with anomalously high polarizability

被引：3
作者：
Komar, V. K. [1 ]
Sulima, S. V.
Chugai, O. N.
Abashin, S. L.
Nikolov, O. T.
Oleinik, S. V.
Puzikov, V. M.
Terzin, I. S.
Yatsina, Yu. A.
机构：
[1] Zhukovsky Natl Aerosp Univ, UA-61070 Kharkov, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 07期
关键词：
SEMICONDUCTORS;
D O I：
10.1134/S106378501107008X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of ultrasmall exposure doses (10-45 R) of gamma-radiation on both real and imaginary parts of the complex dielectric permittivity of CdZnTe crystals in the low-frequency range has been discovered. It is shown that the observed effect is related to (i) changes in the system of intrinsic structural defects, which cause a deviation of the crystal composition from stoichiometry and (ii) growth-related large-scale fluctuations of the electric potential.
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页码：589 / 592
页数：4
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