Effect of ionizing radiation in ultrasmall doses on dielectric properties of CdZnTe crystals with anomalously high polarizability

被引：3

作者：

Komar, V. K. ^{[1
]}

Sulima, S. V.

Chugai, O. N.

Abashin, S. L.

Nikolov, O. T.

Oleinik, S. V.

Puzikov, V. M.

Terzin, I. S.

Yatsina, Yu. A.

机构：

[1] Zhukovsky Natl Aerosp Univ, UA-61070 Kharkov, Ukraine

来源：

TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 07期

关键词：

SEMICONDUCTORS;

D O I：

10.1134/S106378501107008X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of ultrasmall exposure doses (10-45 R) of gamma-radiation on both real and imaginary parts of the complex dielectric permittivity of CdZnTe crystals in the low-frequency range has been discovered. It is shown that the observed effect is related to (i) changes in the system of intrinsic structural defects, which cause a deviation of the crystal composition from stoichiometry and (ii) growth-related large-scale fluctuations of the electric potential.

引用

页码：589 / 592

页数：4

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