Minimizing stress in large-area surface micromachined perforated membranes with slits

被引:12
作者
Ghaderi, M. [1 ]
Ayerden, N. P. [1 ]
de Graaf, G. [1 ]
Wolffenbuttel, R. F. [1 ]
机构
[1] Delft Univ Technol, Fac EEMCS, Elect Instrumentat Microelect Dept, NL-2628 CD Delft, Netherlands
关键词
perforated membrane; slits; MEMS; residual stress; von mises stress; stress compensation methods; ELASTIC-DEFORMATION; RESIDUAL-STRESS; FRACTURE; STRENGTH;
D O I
10.1088/0960-1317/25/7/074010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the effectiveness of both design and fabrication techniques for avoiding the rupturing or excessive bending of perforated membranes after release in surface micromachining. Special lateral designs of arrays of slits in the membrane were investigated for a maximum yield at a given level of residual stress. Process parameters were investigated and optimized for minimum residual stress in multilayer thin-film membranes. A 2 mu m thick sacrificial TEOS layer and a structural membrane that is composed of silicon nitride and polysilicon layers in the stack is the basis of this study. The effect of sharp corners on the local stress in membranes was investigated, and structures are proposed that reduce these effects, maximizing the yield at a given level of residual stress. The effects of perforation and slits were studied both theoretically and using finite element analysis. While the overall effect of perforation is negligible in typical MEMS structures, an optimum design for the slits reduces the von Mises stress considerably as compared to sharp corners. The fabrication process was also investigated and optimized for the minimum residual stress of both the layers within the stack and the complete layer stack. The main emphasis of this work is on placing a stress-compensating layer on the wafer backside and simultaneously removing it during the surface micromachining, as this has been found to be the most effective method to reduce the overall stress in a stack of layers after sacrificial etching. Implementation of a stress compensating layer reduced the total residual stress from 200 MPa compressive into almost 60 MPa, tensile. Even though a particular structure was studied here, the employed methods are expected to be applicable to similar MEMS design problems.
引用
收藏
页数:9
相关论文
共 29 条
[1]  
[Anonymous], 1999, P 10 INT C SOL STAT
[2]  
[Anonymous], J MICROMECH MICROENG
[3]  
[Anonymous], NANO MICROENGINEERED
[4]   Elimination of stress-induced curvature in thin-film structures [J].
Bifano, TG ;
Johnson, HT ;
Bierden, P ;
Mali, RK .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2002, 11 (05) :592-597
[5]   INTERNAL STRESSES [J].
BUCKEL, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :606-+
[6]   CALCULATION OF FRACTURE-MECHANICS PARAMETERS FOR A GENERAL CORNER [J].
CARPENTER, WC .
INTERNATIONAL JOURNAL OF FRACTURE, 1984, 24 (01) :45-58
[7]   Equivalent strengths for reliability assessment of MEMS structures [J].
Chen, KS ;
Ou, KS .
SENSORS AND ACTUATORS A-PHYSICAL, 2004, 112 (01) :163-174
[8]  
Chen KS, 2010, MICRO NANO TECHNOL, P305, DOI 10.1016/B978-0-8155-1594-4.00018-8
[9]   Strength and sharp contact fracture of silicon [J].
Cook, RF .
JOURNAL OF MATERIALS SCIENCE, 2006, 41 (03) :841-872
[10]   Optimization of a low-stress silicon nitride process for surface-micromachining applications [J].
French, PJ ;
Sarro, PM ;
Mallee, R ;
Fakkeldij, EJM ;
Wolffenbuttel, RF .
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 58 (02) :149-157