A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

被引：29

作者：

Andersson, Christer M. ^{[1
]}

Ejebjork, Niclas ^{[1
]}

Henry, Anne ^{[2
]}

Andersson, Sven ^{[2
]}

Janzen, Erik ^{[2
]}

Zirath, Herbert ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

关键词：

Interdigitated; load modulation; power amplifiers (PAs); Schottky diodes; self-aligned; SiC; tuning range; varactors; SILICON-CARBIDE; DIODES;

D O I：

10.1109/LED.2011.2131117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

引用

页码：788 / 790

页数：3

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