Atomic layer deposition of zirconium titanium oxide from titanium isopropoxide and zirconium chloride

被引：32

作者：

Rahtu, A ^{[1
]}

Ritala, M ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

CHEMISTRY OF MATERIALS | 2001年 / 13卷 / 05期

关键词：

D O I：

10.1021/cm0012062

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition of ZrxTiyOz thin films using titanium isopropoxide and zirconium chloride as precursors in a temperature range of 200-300 degreesC was studied. Instead of using water or other compounds as a separate oxygen source, titanium isopropoxide served as both an oxygen and a metal source. At 300 degreesC the growth rate was 1.2 Angstrom /cycle. The permittivity of the ZrxTiyOz films was 45-65, and the leakage current was 10(-4) A/cm(2) at 0.2 MV/cm. The films were studied by means of spectrophotometry, X-ray diffraction, energy-dispersive X-ray spectroscopy, ion beam analysis, and electrical measurements.

引用

页码：1528 / 1532

页数：5

共 52 条

[1] Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition [J].