Type-II antimonide quantum wells for mid-infrared lasers

被引：4
|
作者：
Yang, MJ
Meyer, JR
Bewley, WW
Felix, CL
Vurgaftman, I
Barvosa-Carter, W
Whitman, LJ
Bartolo, RE
Stokes, DW
Lee, H
Martinelli, RU
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] HRL Labs, Malibu, CA 90256 USA
[3] Sarnoff Corp, Princeton, NJ 08543 USA
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期
关键词：
MBE; infrared lasers; antimonide quantum wells;
D O I：
10.1016/S0925-3467(01)00043-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper discusses some of the key MBE growth issues for type-II Sb-based lasers; and present a summary of our recent progress towards the realization of high-power, high-beam-quality, mid-infrared (IR) lasers based on the "W" configuration of the active region. An optical pumping injection cavity (OPIC) approach has been adopted to improve the external power conversion efficiency. In addition, the first mid-IR angled-grating distributed feedback (cr-DFB) lasers producing near-diffraction-limited output is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：179 / 183
页数：5
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