An Accurate Empirical Model Based on Volterra Series for FET Power Detectors

被引：25
作者：
Andersson, Michael A. [1 ]
Stake, Jan [1 ]
机构：
[1] Chalmers, Terahertz & Millimetre Wave Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 05期
关键词：
Analytical model; field-effect transistors (FETs); graphene; microwave detectors; power detectors; terahertz detectors; Volterra; FIELD-EFFECT TRANSISTORS; 2-DIMENSIONAL ELECTRONIC FLUID; SIGNAL EQUIVALENT-CIRCUIT; MILLIMETER-WAVE; TERAHERTZ RADIATION; IMAGING APPLICATIONS; GRAPHENE; INTERMODULATION; MESFET; DIODE;
D O I：
10.1109/TMTT.2016.2532326
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.
引用
收藏
页码：1431 / 1441
页数：11
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