Synthesis of p-n junctions in ZnO nanorods by O+ ion implantation

被引：7
|
作者：
Singh, Avanendra [1 ]
Senapati, K. [1 ]
Datta, D. P. [1 ]
Singh, R. [2 ]
Som, T. [2 ]
Bhunia, S. [3 ]
Kanjilal, D. [4 ]
Sahoo, Pratap K. [1 ]
机构：
[1] Natl Inst Sci Educ & Res, HBNI, Sch Phys Sci, Jatni 752050, India
[2] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, Odisha, India
[3] Saha Inst Nucl Phys, Kolkata 700064, India
[4] Interuniv Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 409卷
关键词：
ZnO nanorods; Ion implantation; Photoluminescence; p-type conductivity; ZINC-OXIDE; THIN-FILMS; PHOTOLUMINESCENCE; TRANSPORT; DEFECTS; GAS;
D O I：
10.1016/j.nimb.2017.03.048
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Tandem p-n junctions have been synthesized in ZnO nanorods (NRs) by implantation of 50 and 350 keV O+ ions. Conducting-AFM measurements reveal the formation of Schottky like junctions between AFM tip and NRs. Photoluminescence measurements demonstrate the recovery of near band edge (NBE) emission upon annealing, while an additional dominant deep level emission is also observed. De-convolution analysis shows that these peaks originate from Oxygen interstitials (O-i) and may contribute to p-type conductivity in ZnO NRs. Such implanted NRs, may be suitable for green emissions and p-type conductivity. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：143 / 146
页数：4
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