Effect of Cooling Rate on the Properties of the Grain Boundary of CaCu3Ti4O12 Ceramic

被引：2

作者：

He, Jinliang ^{[1
]}

Luo, Fengchao ^{[1
]}

Hu, Jun ^{[1
]}

Lin, Yuan-Hua ^{[2
]}

机构：

[1] Tsinghua Univ, State Key Lab Power Syst, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS VI | 2010年 / 434-435卷

关键词：

CaCu3Ti4O12; cooling rate; grain boundary; HIGH-DIELECTRIC-CONSTANT; DEFECT STRUCTURE;

D O I：

10.4028/www.scientific.net/KEM.434-435.300

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The cooling rate effect on the grain boundaries of the CaCu3Ti4O12 ceramic was investigated in this research. The resistance at the grain boundaries is found to be reduced as the cooling rate rises. The activation energies at the grain boundaries do not change with the cooling rate, suggesting that the conduction mechanism keeps the same in different cooling conditions. There is no significant difference in the permittivity of the samples. The dielectric loss can be lowered by using a smaller cooling rate. These results give clues to comprehend the conductive mechanism of the CCTO ceramic. The variation of the cooling rate may affect the re-oxidation process and cause the changes in electric properties.

引用

页码：300 / +

页数：2

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