Photodetectors in the non-visible region of the electromagnetic spectrum are essential for security, defense and space science as well as industrial and scientific applications. The research activities at Fraunhofer IAF cover a broad range in the infrared (IR) regime. Whereas short-wavelength IR (SWIR, <1.7 mu m) detectors are realized by InGaAs/InP structures, InAs/GaSb type-II superlattice (T2SL) infrared detectors are developed for the spectral bands from mid( MWIR, 3-5 mu m) to long-wavelength IR (LWIR, 8-12 mu m). We report on the extension of the superlattice empirical pseudopotential method (SEPM) to 300 K for the design of LWIR heterostructures for operation near room temperature. Recently, we have also adapted heterostructure concepts to our well established bi-spectral T2SL MWIR detector resulting in a dark current density below 2 x 10-9 A/cm(2) for a cut-off wavelength close to 5 mu m. Finally, we present first results obtained with a gated viewing system based on our InGaAs/InAlAs/InP avalanche photodiode arrays.