Photodetector development at Fraunhofer IAF - from LWIR to SWIR operating from cryogenic close to room temperature

被引:8
作者
Daumer, V. [1 ]
Gramich, V. [1 ]
Mueller, R. [1 ]
Schmidt, J. [1 ]
Rutz, F. [1 ]
Stadelmann, T. [1 ]
Woerl, A. [1 ]
Rehm, R. [1 ]
机构
[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany
来源
INFRARED TECHNOLOGY AND APPLICATIONS XLIII | 2017年 / 10177卷
关键词
SWIR; MWIR; LWIR; T2SL; InAs/GaSb type-II superlattice photodetector; InGaAs; InAlAs; avalanche photodiode; APD; INAS/GASB SUPERLATTICES; DETECTORS;
D O I
10.1117/12.2262509
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Photodetectors in the non-visible region of the electromagnetic spectrum are essential for security, defense and space science as well as industrial and scientific applications. The research activities at Fraunhofer IAF cover a broad range in the infrared (IR) regime. Whereas short-wavelength IR (SWIR, <1.7 mu m) detectors are realized by InGaAs/InP structures, InAs/GaSb type-II superlattice (T2SL) infrared detectors are developed for the spectral bands from mid( MWIR, 3-5 mu m) to long-wavelength IR (LWIR, 8-12 mu m). We report on the extension of the superlattice empirical pseudopotential method (SEPM) to 300 K for the design of LWIR heterostructures for operation near room temperature. Recently, we have also adapted heterostructure concepts to our well established bi-spectral T2SL MWIR detector resulting in a dark current density below 2 x 10-9 A/cm(2) for a cut-off wavelength close to 5 mu m. Finally, we present first results obtained with a gated viewing system based on our InGaAs/InAlAs/InP avalanche photodiode arrays.
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页数:7
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  • [1] Temperature dependence performances of InAs/GaSb superlattice photodiode
    Cervera, C.
    Jaworowicz, K.
    Ait-Kaci, H.
    Chaghi, R.
    Rodriguez, J. B.
    Ribet-Mohamed, I.
    Christol, P.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2011, 54 (03) : 258 - 262
  • [2] Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors
    Klein, B.
    Plis, E.
    Kutty, M. N.
    Gautam, N.
    Albrecht, A.
    Myers, S.
    Krishna, S.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (07)
  • [3] Performance modeling of MWIR InAs/GaSb/B-Al0.2Ga0.8Sb type-II superlattice nBn detector
    Martyniuk, P.
    Wrobel, J.
    Plis, E.
    Madejczyk, P.
    Kowalewski, A.
    Gawron, W.
    Krishna, S.
    Rogalski, A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (05)
  • [4] Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices
    Masur, J. -M.
    Rehm, R.
    Schmitz, J.
    Kirste, L.
    Walther, M.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2013, 61 : 129 - 133
  • [5] Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range
    Rehm, R
    Walther, M
    Schmitz, J
    Fleissner, J
    Ziegler, J
    Cabanski, W
    Breiter, R
    [J]. ELECTRONICS LETTERS, 2006, 42 (10) : 577 - 578
  • [6] SWIR detectors for low photon fluxes
    Rutz, Frank
    Kleinow, Philipp
    Aidam, Rolf
    Bronner, Wolfgang
    Stolch, Lukas
    Benecke, Matthias
    Sieck, Alexander
    Rehm, Robert
    [J]. INFRARED SENSORS, DEVICES, AND APPLICATIONS VI, 2016, 9974
  • [7] Development of Bi-Spectral InAs/GaSb Type II Super lattice Image Detectors
    Stadelmann, T.
    Woerl, A.
    Wauro, M.
    Daumer, V.
    Niemasz, J.
    Luppold, W.
    Simon, T.
    Riedel, M.
    Rehm, R.
    Walther, M.
    [J]. INFRARED TECHNOLOGY AND APPLICATIONS XL, 2014, 9070