Magnetic interactions with charge carriers in III-V diluted magnetic semiconductors

被引：13
|
作者：
Van Bockstal, L
Van Esch, A
Bogaerts, R
Herlach, F
van Steenbergen, A
De Boeck, J
Borghs, G
机构：
[1] Katholieke Univ Leuven, Vaste Stof Fys Magnetisme Lab, B-3001 Leuven, Belgium
[2] Univ Nijmegen, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands
[3] IMEC, B-3001 Leuven, Belgium
来源：
PHYSICA B | 1998年 / 246卷
关键词：
diluted magnetic semiconductor; ferromagnetism; metal-to-insulator transition;
D O I：
10.1016/S0921-4526(97)00910-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using a low-temperature MBE growth procedure, Ga1-xMnxAs is obtained with Mn concentrations up to x approximate to 9%. At a temperature around 50 K, a paramagnetic to ferromagnetic phase transition occurs as a result of the interaction between Mn-h complexes. A model based on a mean-field approach explains the observed temperature dependence of the magnetisation. The magnetic behaviour is linked to the magnetotransport features. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：258 / 261
页数：4
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