SiGeBiCMOS technology for RF circuit applications

被引：38

作者：

Racanelli, M ^{[1
]}

Kempf, P ^{[1
]}

机构：

[1] Jazz Semicond, Newport Beach, CA 92660 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期

关键词：

process technology; RF circuits; SiGeBiCMOS; wireless;

D O I：

10.1109/TED.2005.850696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiGe BiCMOS is reviewed with focus on today's production 0.18-mu m technology at f(T)/f(MAX) of 150/200 GHz and future technology where device scaling is bringing about higher f(T)/f(MAX), as well as lower power consumption, noise figure, and improved large-signal performance at higher levels of integration. High levels of radio freqency (RF) integration are enabled by the availability of a number of active and passive modules described in this paper including high voltage and high-power devices, complementary PNPs, high quality NUM capacitors, and inductors. Key RF circuit results highlighting the advantages of SiGe BiCMOS in addressing today's RF IC market are also discussed both for applications at modest frequencies (1 to 10 GHz) as well as for emerging applications at higher frequencies (20 to > 100 GHz).

引用

页码：1259 / 1270

页数：12

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