Direct current magnetron sputter-deposited ZnO thin films

被引:45
作者
Hoon, Jian-Wei [1 ]
Chan, Kah-Yoong [1 ]
Krishnasamy, Jegenathan [1 ]
Tou, Teck-Yong [1 ]
Knipp, Dietmar [2 ]
机构
[1] Multimedia Univ, Fac Engn, Cyberjaya 63100, Selangor, Malaysia
[2] Jacobs Univ Bremen, Sch Sci & Engn, D-28759 Bremen, Germany
关键词
ZnO; Sputtering; Optical properties; Structural properties; OXIDE SEMICONDUCTORS; OPTICAL-PROPERTIES; TRANSPARENT; THICKNESS; AL;
D O I
10.1016/j.apsusc.2010.10.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150nm to 750nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 degrees C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:2508 / 2515
页数:8
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