Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique -: Key to first demonstration of GaAs MOSFETs

被引：0

作者：

Hong, M ^{[1
]}

Ren, F ^{[1
]}

Hobson, WS ^{[1
]}

Kuo, JM ^{[1
]}

Kwo, J ^{[1
]}

Mannaerts, JP ^{[1
]}

Lothian, JR ^{[1
]}

Marcus, MA ^{[1
]}

Liu, CT ^{[1
]}

Sergent, AM ^{[1
]}

Lay, TS ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reviews our recent research efforts on GaAs passivation by the growth of a novel oxide made of Ga2O3 and Gd2O3. The oxide-GaAs interface has a low interfacial state density of 10(10) cm(-2)eV(-1), comparable to that of SiO2-Si interface. A multi-chamber UHV system, including molecular beam epitaxy (MBE) growth chambers, has been used to fabricate Ga2O3(Gd2O3)-GaAs device wafers. The growth of Ga2O3(Gd2O3), in combining a conventional ion implantation process, enables us to demonstrate the first enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with inversion.

引用

页码：319 / 324

页数：6

共 50 条

[11] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
Moench, Winfried
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (02) : 1444 - 1448
[12] GaAs MOSFET's using Ga2O3(Gd2O3) as gate dielectric
Hong, Minghwei
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 685 - 688
[13] Demonstration of Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
Ren, F
Hong, M
Kuo, JM
Hobson, WS
Tsai, HS
Lothian, JR
Mannaerts, JP
Kwo, J
Chu, SNG
Lin, J
Chen, YK
Cho, AY
55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 78 - 79
[14] Characteristics of Ga2O3(Gd2O3)/GaAs interface:: Structures and compositions
Hong, M
Kortan, AR
Kwo, J
Mannaerts, JP
Krajewski, JJ
Lu, ZH
Hsieh, KC
Cheng, KY
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1688 - 1691
[15] Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications
Lay, TS
Hong, M
Mannaerts, JP
Liu, CT
Kwo, J
Ren, F
Marcus, MA
Ng, KK
Chen, YK
Chou, LJ
Hsieh, KC
Cheng, KY
OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 78 - 84
[16] Energy band offsets at a Ga2O3(Gd2O3)-GaAs interface
Lay, TS
Hong, M
Kwo, J
Mannaerts, JP
Hung, WH
Huang, DJ
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 131 - 135
[17] Growth of β-Ga2O3 and (sic)/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
Raghuvansy, Sushma
Mccandless, Jon P.
Schowalter, Marco
Karg, Alexander
Alonso-Orts, Manuel
Williams, Martin S.
Tessarek, Christian
Figge, Stephan
Nomoto, Kazuki
Xing, Huili Grace
Schlom, Darrell G.
Rosenauer, Andreas
Jena, Debdeep
Eickhoff, Martin
Vogt, Patrick
APL MATERIALS, 2023, 11 (11)
[18] Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
Ren, F
Abernathy, CR
MacKenzie, JD
Gila, BP
Pearton, SJ
Hong, M
Marcus, MA
Schurman, MJ
Baca, AG
Shul, RJ
SOLID-STATE ELECTRONICS, 1998, 42 (12) : 2177 - 2181
[19] GaAs MOSFET's using Ga2O3(Gd2O3) as gate dielectric (invited)
Hong, MW
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 685 - 688
[20] Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide
Wang, YC
Hong, M
Kuo, JM
Mannaerts, JP
Kwo, J
Tsai, HS
Krajewski, JJ
Weiner, JS
Chen, YK
Cho, AY
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 219 - 225

← 1 2 3 4 5 →