Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique -: Key to first demonstration of GaAs MOSFETs

被引：0

作者：

Hong, M ^{[1
]}

Ren, F ^{[1
]}

Hobson, WS ^{[1
]}

Kuo, JM ^{[1
]}

Kwo, J ^{[1
]}

Mannaerts, JP ^{[1
]}

Lothian, JR ^{[1
]}

Marcus, MA ^{[1
]}

Liu, CT ^{[1
]}

Sergent, AM ^{[1
]}

Lay, TS ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reviews our recent research efforts on GaAs passivation by the growth of a novel oxide made of Ga2O3 and Gd2O3. The oxide-GaAs interface has a low interfacial state density of 10(10) cm(-2)eV(-1), comparable to that of SiO2-Si interface. A multi-chamber UHV system, including molecular beam epitaxy (MBE) growth chambers, has been used to fabricate Ga2O3(Gd2O3)-GaAs device wafers. The growth of Ga2O3(Gd2O3), in combining a conventional ion implantation process, enables us to demonstrate the first enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with inversion.

引用

页码：319 / 324

页数：6

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