Degradation and transient currents in III-nitride LEDs

被引：10

作者：

Rebane, YT ^{[1
]}

Bochkareva, NI ^{[1
]}

Bougrov, VE ^{[1
]}

Tarkhin, DV ^{[1
]}

Shreter, YG ^{[1
]}

Girnov, EA ^{[1
]}

Stepanov, SI ^{[1
]}

Wang, WN ^{[1
]}

Chang, PT ^{[1
]}

Wang, PJ ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII | 2003年 / 4996卷

关键词：

LED; GaN; degradation; transient currents; dislocations; phase separation;

D O I：

10.1117/12.476553

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The transient current time dependencies are non-exponential and show a distribution of relaxation times in the range of 1-100 microseconds. The charge associated with the transient currents is Q similar to3x10(-10) C which corresponds to high number of carrier traps N-t similar to 2x10(9) in the investigated chips. For one-year old chips an increase of charge and trap number by similar to25% has been found compared to the fresh chips. Two probable reasons have been suggested to explain the observed increase of number of carrier traps: first one is related to increase of the number of trap sites at dislocations, and second one is a gradual phase separation process in quantum wells resulting in degradation of their quality.

引用

页码：113 / 124

页数：12