Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

被引：44

作者：

Hinds, BJ ^{[1
]}

Wang, F ^{[1
]}

Wolfe, DM ^{[1
]}

Hinkle, CL ^{[1
]}

Lucovsky, G ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

基金：

美国国家科学基金会;

关键词：

SiOx; decomposition; deposition; photoluminescence;

D O I：

10.1016/S0022-3093(98)00094-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The kinetics of the decomposition of silicon suboxides (SiOx, 0.7 < x < 1.3) was studied as function of post deposition annealing treatment. Amorphous Si:O:H alloys were deposited by remote plasma enhanced chemical vapor deposition and subjected to rapid thermal anneal. Extent of reaction was monitored by Fourier transform infrared analysis. For all compositions, it was found that there was a fast initial reaction associated with hydrogen loss, followed by a decelatory reaction that is described as 3-dimensional diffusion limited. However the reaction is strongly deceleratory at temperatures less than 900 degrees C, thus SiOx stability is found through kinetic hindrance. Photoluminescence (PL) experiments showed that the decomposition reaction proceeds in the amorphous state with the observation of a-Si PL after high temperature anneals up to 800 degrees C and H-2 plasma passivation. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：507 / 512

页数：6

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