An approach to enhanced acceptor concentration in ZnO:N films

被引：7

作者：

Li, L. ^{[1
,2
]}

Shan, C. X. ^{[1
]}

Li, B. H. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Yao, B. ^{[1
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

Lu, Y. M. ^{[3
]}

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2010年 / 45卷 / 15期

基金：

中国国家自然科学基金;

关键词：

MOLECULAR-BEAM EPITAXY; THIN-FILMS; ROOM-TEMPERATURE; DEPOSITION; EMISSION; NO;

D O I：

10.1007/s10853-010-4497-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Owing to the low doping concentration of nitrogen and strong compensation of intrinsic donors, the attainment of highly conductive p-type ZnO films remains one of the largest challenges for the application of ZnO. An approach has been proposed to increase the doping concentration of nitrogen in ZnO by exposing the ZnO:N films in the ambient of nitrogen plasma periodically in this paper. Hall measurements and photoluminescence spectroscopy indicate that this approach is effective in improving the hole concentration in ZnO films. Under the optimized conditions, a p-type ZnO film with a hole concentration of 1.68 x 10(18) cm(-3) has been achieved.

引用

页码：4093 / 4096

页数：4

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