High efficient inverted polymer solar cells with different annealing treatment

被引:19
|
作者
Xu, Xiaowei [1 ]
Zhang, Fujun [1 ]
Zhang, Jian [2 ]
Wang, Hui [3 ]
Zhuo, Zuliang [1 ]
Liu, Yang [1 ]
Wang, Jian [1 ]
Wang, Zixuan [1 ]
Xu, Zheng [1 ]
机构
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ China, Beijing 100044, Peoples R China
[2] Dalian Inst Chem Phys CAS, State Key Lab Catalysis, Dalian 116023, Peoples R China
[3] Tech Inst Phys & Chem CAS, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS | 2012年 / 32卷 / 04期
基金
中国国家自然科学基金;
关键词
Inverted polymer solar cells; Annealing treatment; P3HT:PCBM; Buffer layers; POLY(3-HEXYLTHIOPHENE) METHANO-FULLERENE; VERTICAL PHASE-SEPARATION; OPEN-CIRCUIT VOLTAGE; PERFORMANCE; BLENDS; IMPROVEMENT; MORPHOLOGY; CS2CO3; LAYER;
D O I
10.1016/j.msec.2012.01.008
中图分类号
TB3 [工程材料学]; R318.08 [生物材料学];
学科分类号
0805 ; 080501 ; 080502 ;
摘要
Inverted polymer solar cells (IPSCs) were fabricated with cesium carbonate (Cs2CO3) modified indium tin oxide (ITO) substrates as the electrode and molybdenum trioxide (MoO3) modified Al as the anode. The Cs2CO3 dissolved in 2-ethoxyethanol was spin-coated on ITO substrates, showing snowflake-like morphology characterized by the scanning electron microscope (SEM). The absorption, X-ray diffraction as well as the morphology of the active layer were measured before and after annealing treatment. The IPSCs with annealing treatments on the active layers and MoO3 layers exhibited the maximum power conversion efficiency (PCE) approaching to 2%, with open circuit voltage (V-oc) of 0.57 V. short circuit current density (J(sc)) of 8.8 mA/cm(2) and fill factor (FF) of 38.7%. The performance of IPSCs was dramatically decreased by annealing treatment after the deposition of Al cathode, which may be due to the diffusion of Al atom crossing the MoO3 layer forming new channels for charge carrier collection. However, the new channels are not beneficial to the charge carrier collection, which is demonstrated from that the J(sc) of IPSCs was evidently decreased from 8.8 to 4.6 mA/cm(2) by annealing treatment after deposition Al layer. The annealing treatment after deposition of MoO3 could improve the interfacial contact to aid in electron extraction. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:685 / 691
页数:7
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