High resolution electron beam lithography of PMGI using solvent developers

被引:16
作者
Cui, Bo [1 ]
Veres, Teodor [1 ]
机构
[1] Natl Res Council Canada, Inst Ind Mat, Boucherville, PQ J4B 6Y4, Canada
关键词
PMGI; electron beam lithography; solvant developer; resist; high resolution;
D O I
10.1016/j.mee.2008.01.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report in this paper that typical solvent developers for PMMA can be used to develop PMGI (polydimethyl glutarimide) with a contrast much higher than that reported using base developers. Three developers were studied: methyl isobutyl ketone (MIBK), 2-ethoxyethanol (cellosolve), and methyl ethyl ketone (MEK). MIBK developer results in the highest contrast of 6.7 which is comparable to that of PMMA followed by MEK (4.0) and then by cellosolve (2.6). The sensitivity is around 1000 mu C/cm(2), roughly four times that of PMMA and almost independent of the developers. Higher resist baking temperature leads to higher contrast for MEK and cellosolve, whereas for MlBK the optimum baking temperature is 200 degrees C. Both MIBK and MEK (but not cellosolve) developers can resolve 50 nm pitch grating with slight line distortion which is similar to that achievable by PMMA. Using a single step development, a double layer of PMMA and PMGI could be employed to facilitate the liftoff process or to fabricate a T-shaped gate structure, while a multilayer stack can be used to produce 3D metal structures by electroplating. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:810 / 813
页数:4
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