Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

被引：2

作者：

Qamar, Afzaal ^{[1
]}

Dao, Dzung Viet ^{[1
,2
]}

Hoang-Phuong Phan ^{[1
]}

Dinh, Toan ^{[1
]}

Dimitrijev, Sima ^{[1
,2
]}

机构：

[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia

[2] Griffith Univ, Sch Engn, Southport, Qld 4222, Australia

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 09期

关键词：

SILICON-CARBIDE; OFFSET VOLTAGE; STRESS; DEPENDENCE; DEVICE; MEMS;

D O I：

10.1063/1.4962048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P-12 = (5.3 +/- 0.4) x 10(-11) Pa-1; P-11 = (-2.6 +/- 0.6) x 10(-11) Pa-1, and P-44 = (11.42 +/- 0.6) x 10(-11) Pa-1. Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity. Published by AIP Publishing.

引用

页数：4

共 26 条

[1] Effect of Stress Due to Plastic Package Moisture Absorption in Hall Sensors [J].