Preparation of photoactive ZnGeP2 nanowire films

被引：10
作者：
Collins, Sean M. [1 ]
Hankett, Jeanne M. [1 ]
Carim, Azhar I. [1 ]
Maldonado, Stephen [1 ,2 ]
机构：
[1] Univ Michigan, Dept Chem, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Program Appl Phys, Ann Arbor, MI 48109 USA
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 14期
基金：
美国国家科学基金会;
关键词：
III-V NANOWIRES; RAMAN-SCATTERING; PRESSURE-DEPENDENCE; OPTICAL-PROPERTIES; GALLIUM-PHOSPHIDE; CUINSE2; NANOWIRES; EPITAXIAL-GROWTH; LARGE-SCALE; GAP; HYDROGEN;
D O I：
10.1039/c2jm16453a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoactive ZnGeP2 nanowires have been prepared by solid-source sublimation chemical vapor deposition using Sn catalysts. Nanowire films with areas >0.5 cm(2) on Si(100) and Si(111) substrates were deposited with variable nanowire length and diameter. Transmission electron microscopy (TEM), scanning TEM (STEM), and polarized Raman microscopy indicated nanowires exhibited single-crystal character and compositional homogeneity. Photoelectrochemical measurements performed in an aqueous electrolyte indicated the as-prepared ZnGeP2 nanowires were p-type and capable of passing sustained cathodic photocurrents under white light illumination. The presented results identify a straight-forward approach to the preparation of II-IV-V-2 nanowire films with features suitable for optical and photoelectrochemical energy conversion/storage applications.
引用
收藏
页码：6613 / 6622
页数：10
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