High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

被引：60
作者：
Lee, Geng-Yen [1 ]
Liu, Hsueh-Hsing [1 ]
Chyi, Jen-Inn [1 ,2 ,3 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan
[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期
关键词：
AlGaN/AlN buffer; AlGaN/GaN; Schottky barrier diodes (SBDs); BREAKDOWN VOLTAGE; SURFACE-STATES; GAN; DISLOCATIONS; RECTIFIERS;
D O I：
10.1109/LED.2011.2164610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-mu m anode-to-cathode spacing exhibit a high breakdown voltage (V-B) of 3489 V, a low leakage current (I-R) of less than 0.2 mu A at -2000 V, and a low specific on-resistance (R-on) of 7.9 m Omega . cm(2), resulting in a figure of merit (V-B(2)/R-on) as high as 1.54 GW/cm(2). Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.
引用
收藏
页码：1519 / 1521
页数：3
相关论文
共 17 条
  • [1] High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
    Chen, Wanjun
    Wong, King-Yuen
    Huang, Wei
    Chen, Kevin J.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [2] Deep acceptors trapped at threading-edge dislocations in GaN
    Elsner, J
    Jones, R
    Heggie, MI
    Sitch, PK
    Haugk, M
    Frauenheim, T
    Oberg, S
    Briddon, PR
    [J]. PHYSICAL REVIEW B, 1998, 58 (19): : 12571 - 12574
  • [3] Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
  • [4] Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
    Hsu, JWP
    Manfra, MJ
    Molnar, RJ
    Heying, B
    Speck, JS
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (01) : 79 - 81
  • [5] Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
    Ibbetson, JP
    Fini, PT
    Ness, KD
    DenBaars, SP
    Speck, JS
    Mishra, UK
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 250 - 252
  • [6] Ikeda N, 2004, ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P369
  • [7] Ishibuchi H., 2008, IEDM, P1, DOI DOI 10.1109/IEDM.2008.4796636
  • [8] Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
    Johnson, JW
    Zhang, AP
    Luo, WB
    Ren, F
    Pearton, SJ
    Park, SS
    Park, YJ
    Chyi, JI
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (01) : 32 - 36
  • [9] Lee SC, 2005, INT SYM POW SEMICOND, P247
  • [10] Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer
    Liu, Hsueh-Hsing
    Chen, Guan-Ting
    Lan, Yung-Ling
    Lee, Geng-Yen
    Chyi, Jen-Inn
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
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