A Wide-Dynamic-Range CMOS Image Sensor With Gating for Night Vision Systems

被引:8
作者
Spivak, Arthur [1 ]
Belenky, Alexander [1 ]
Fish, Alexander [1 ]
Yadid-Pecht, Orly [2 ]
机构
[1] Ben Gurion Univ Negev, VLSI Syst Ctr, IL-84105 Beer Sheva, Israel
[2] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB T2N 1N4, Canada
关键词
CMOS image sensors; gated vision; global shutter; night vision; wide dynamic range; CHARGE INJECTION; PIXEL; NOISE;
D O I
10.1109/TCSII.2010.2104014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a novel concept for a global multishuttering CMOS image sensor with linear wide-dynamic-range (WDR) implementation for night vision systems. The proposed imager is synchronized with an external active pulsed light source and is suitable for surveillance, automotive, and military applications. The proposed imager provides a linear WDR by applying adaptive exposure time to each pixel according to the local intensity level of illumination. Each pixel has a size of 13.75 mu m x 13.75 mu m, consists of only eight transistors, dissipates 100 nW, and provides dynamic range expansion of up to 98 dB. System architecture and algorithm are described. Pixel structure and design are analyzed according to charge injection considerations and signal-to-noise ratio requirements. Sensor principle of operation is presented, and simulation and experimental results for the proof of the concept are shown.
引用
收藏
页码:85 / 89
页数:5
相关论文
共 15 条
[1]   Global shutter CMOS image sensor with wide dynamic range [J].
Belenky, Alexander ;
Fish, Alexander ;
Spivak, Arthur ;
Yadid-Pecht, Orly .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2007, 54 (12) :1032-1036
[2]   ON CHARGE INJECTION IN ANALOG MOS SWITCHES AND DUMMY SWITCH COMPENSATION TECHNIQUES [J].
EICHENBERGER, C ;
GUGGENBUHL, W .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1990, 37 (02) :256-264
[3]  
Gerdt D. W., 1990, U.S. patent, Patent No. [4,920,412 A, 4920412]
[4]  
Inbar S., 2008, U.S Patent, Patent No. [7,379,164, 7379164]
[5]  
Jarwal RK, 2001, IEEE T ELECTRON DEV, V48, P858, DOI 10.1109/16.918231
[6]   A CMOS time-of-flight range image sensor with gates-on-field-oxide structure [J].
Kawahito, Shoji ;
Halin, Izhal Abdul ;
Ushinaga, Takeo ;
Sawada, Tornonari ;
Homma, Mitsuru ;
Maeda, Yasunari .
IEEE SENSORS JOURNAL, 2007, 7 (11-12) :1578-1586
[7]  
RANKIN LA, 2005, P SOC PHOTO-OPT INS, V5804, P343
[8]  
Rumar K, 2002, Report No. UMTRI-2002-12
[9]  
SEWELL KG, 1995, Patent No. 5408541
[10]   A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling [J].
Shafie, Suhaidi ;
Kawahito, Shoji ;
Itoh, Shinya .
SENSORS, 2008, 8 (03) :1915-1926