Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111)SrTiO3 substrates by pulsed laser deposition

被引：32

作者：

Sakurai, Hiroyuki ^{[1
]}

Yamazoe, Seiji ^{[1
]}

Wada, Takahiro ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 04期

关键词：

antiferroelectric materials; ferroelectric materials; ferroelectric thin films; permittivity; pulsed laser deposition; scanning electron microscopy; silver compounds; surface texture; THIN-FILMS; PHASE-TRANSITIONS; NANBO3; CRYSTALS; CERAMICS; DIFFRACTION; NIOBATE; SYSTEM;

D O I：

10.1063/1.3467137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated 001, 110, and 111 oriented AgNbO3 (AN) films on (001)SrTiO3 (STO), (110)STO, and (111)STO substrates by pulsed laser deposition, respectively. Scanning electron microscope images showed that the surface textures of the AN films on the (001), (110), and (111)STO substrates took the form of a lattice-shaped pattern, a striped pattern, and trigonal pyramid-like structures, respectively. The AN film on the (001)STO had the largest relative dielectric constant of 748 in all films. The P-E hysteresis showed that the AN film on (001)STO exhibited antiferroelectricity and the other AN films deposited on (110) and (111)STO showed a ferroelectric property. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467137]

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