Stacked InAs self-assembled quantum dots on (001)GaAs grown by molecular beam epitaxy

被引：61

作者：

Sugiyama, Y ^{[1
]}

Nakata, Y ^{[1
]}

Imamura, K ^{[1
]}

Muto, S ^{[1
]}

Yokoyama, N ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

quantum dots; InAs; vertical alignment; In segregation; optical memory;

D O I：

10.1143/JJAP.35.1320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report stacked InAs self-assembled quantum dot (QD) structures separated by GaAs interval layers grown by molecular beam epitaxy on a (001) GaAs substrate. The InAs QDs were vertically aligned up to the 9th layer. Strain in the interval layer induced by the lower QD strongly influences the upper QD alignment. A large defect due to lateral In segregation was observed with multiple stacked InAs self-assembled QD structures, which suppresses further vertical alignment of QDs in the upper region and decreases photoluminescence intensity drastically Optical memory effect of InAs QDs buried in Schottky barrier diode was observed with memory retention time of 0.48 ms for the first time.

引用

页码：1320 / 1324

页数：5

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