Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

被引：6

作者：

Cham Thi Trinh ^{[1
,4
]}

Nakagawa, Yoshihiko ^{[1
]}

Hara, Kosuke O. ^{[2
]}

Kurokawa, Yasuyoshi ^{[1
]}

Takabe, Ryota ^{[3
]}

Suemasu, Takashi ^{[3
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[4] Helmholtz Zentrum Berlin Mat & Energy, Inst Silicon Photovolta, D-12489 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY; SOLAR-CELL APPLICATIONS; THIN-FILMS; SEMICONDUCTING SILICIDES; BA1-XSRXSI2; SI;

D O I：

10.7567/JJAP.56.05DB06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 mu s was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells. (c) 2017 The Japan Society of Applied Physics

引用

页数：6

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