A Fully Integrated 0.18-μm CMOS Transceiver Chip for X-Band Phased-Array Systems

被引：61

作者：

Gharibdoust, Kiarash ^{[1
]}

Mousavi, Naser ^{[2
]}

Kalantari, Milad ^{[2
]}

Moezzi, Mohsen ^{[2
]}

Medi, Ali ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Microelect Syst Lab, Lausanne, Switzerland

[2] Sharif Univ Technol, Tehran 113658639, Iran

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 07期

关键词：

Active beam-former; amplifier; attenuator; phase shifter; T/R module; POWER-AMPLIFIER; RECEIVER; SHIFTER; LINEARIZATION;

D O I：

10.1109/TMTT.2012.2195020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-band core chip is designed and fabricated in 0.18-mu m CMOS technology, which can significantly reduce the monolithic microwave integrated circuit count required for realizing an active beam-former T/R module. The core chip consists of two RX/TX paths, each of which includes a 6-b phase shifter, a 6-b attenuator, along with two input and output amplifiers. A new architecture for realizing such a core chip system and a low loss circuit for 5.625 degrees phase shift block are proposed. The overall rms phase and gain errors are better than 2 degrees and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the band of interest.

引用

页码：2192 / 2202

页数：11

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