NexFET Generation 2, New Way to Power

被引：0

作者：

Yang, Boyi ^{[1
]}

Xu, Shuming ^{[1
]}

Korec, Jacek ^{[1
]}

Wang, Jun ^{[1
]}

Lopez, Ozzie ^{[1
]}

Jauregui, David ^{[1
]}

Kocon, Christopher ^{[1
]}

Herbsommer, Juan ^{[1
]}

Molloy, Simon ^{[1
]}

Daum, Gary ^{[1
]}

Lin, Haian ^{[1
]}

Pearce, Charles ^{[1
]}

Noquil, Jonathan ^{[1
]}

Shen, John ^{[2
]}

机构：

[1] Texas Instruments Inc, Low Voltage Power Stage Unite, Bethlehem, PA 18015 USA

[2] Univ Cent Florida, Dept Elect Engn, Orlando, FL 32816 USA

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low V-th power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition.

引用

页数：4