Effect of Annealing Temperature on Structural, Optical, and Electrical Properties of Sol-Gel Spin-Coating-Derived Cu2ZnSnS4 Thin Films

被引：23
作者：
Hosseinpour, Rabie [1 ]
Izadifard, Morteza [1 ]
Ghazi, Mohammad Ebrahim [1 ]
Bahramian, Bahram [2 ]
机构：
[1] Shahrood Univ Technol, Dept Phys, Shahrood, Iran
[2] Shahrood Univ Technol, Dept Chem, Shahrood, Iran
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 02期
关键词：
Cu2ZnSnS4 (CZTS) thin films; sol-gel spin coating; annealing; kesterite structure; bandgap energy;
D O I：
10.1007/s11664-017-5861-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of annealing temperature on structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films grown on a glass substrate by spin coating sol-gel technique has been studied. Structural study showed that all samples had kesterite crystalline structure. Scanning electron microscopy images showed that the crystalline quality of the samples was improved by heat treatment. Optical study showed that the energy gap values for the samples ranged from 1.55 eV to 1.78 eV. Moreover, good optical conductivity values (10(12) S-1 to 10(14) S-1) were obtained for the samples. Investigation of the electrical properties of the CZTS thin films showed that the carrier concentration increased significantly with the annealing temperature. The photoelectrical behavior of the samples revealed that the photocurrent under light illumination increased significantly. Overall, the results show that the CZTS thin films annealed at 500A degrees C had better structural, optical, and electrical properties and that such CZTS thin films are desirable for use as absorber layers in solar cells. The photovoltaic properties of the CZTS layer annealed at 500A degrees C were also investigated and the associated figure of merit calculated. The results showed that the fabricated ZnS-CZTS heterojunction exhibited good rectifying behavior but rather low fill factor.
引用
收藏
页码：1080 / 1090
页数：11
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