Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

被引：15

作者：

Hsieh, Cheng-Chih ^{[1
]}

Chang, Yao-Feng ^{[1
]}

Chen, Ying-Chen ^{[1
]}

Shahrjerdi, Davood ^{[2
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] NYU, Dept Elect & Comp Engn, Brooklyn, NY 11201 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 09期

基金：

美国国家科学基金会;

关键词：

RESISTIVE SWITCHING MEMORY;

D O I：

10.1149/2.0041709jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present silicon process compatible, stable and reliable (> 10(8) cycles), high non-linearity ratio at a half-read voltage (> 5 x 10(5)), high speed (< 60 ns), and low operating voltage (< 3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays. (c) The Author(s) 2017. Published by ECS. All rights reserved.

引用

页码：N143 / N147

页数：5

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