Magneto-plasmon spectrum in a semiconductor under intense laser radiation

被引：0

作者：

Xu, W ^{[1
]}

Zhang, C ^{[1
]}

Lewis, RA ^{[1
]}

机构：

[1] Univ Wollongong, Inst Supercond & Elect Mat, Dept Engn Phys, Wollongong, NSW 2522, Australia

来源：

PHYSICA B-CONDENSED MATTER | 1998年 / 256卷

基金：

澳大利亚研究理事会;

关键词：

magneto-plasmon; bulk semiconductor; free-electron laser;

D O I：

10.1016/S0921-4526(98)00506-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study how a linearly polarised intense laser irradiation affects the magneto-plasmon (MP) modes in a semiconductor. We first evaluate the electron Green's function, the density-density correlation function, and the random-phase approximation (RPA) dielectric function in the (Q, t) representation in the presence of a laser field and a quantizing magnetic field. From these results, we obtain the electron density of states (DOS) and the plasmon spectrum in the (Q, Omega) representation and investigate the dependence of the MP excitations on the frequency and intensity of the laser field in GaAs. The results are pertinent to the application of free-electron lasers developed recently. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：645 / 648

页数：4